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hanbit h m f 4 m32 b8 v s url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 1 pin assignment general description the h m f 4 m32 b8 v s is a high - speed flash read only memory (from) module containing 4,194,304 words organized in a x32bit configuration. the module consists of eight 2 m x 8 from mounted on a 72 - pin, single - sided, fr4 - printed circ uit board. commands are written to the command register using standard microprocessor write timings. register contents serve as input to an internal state - machine, which controls the erase and programming circuitry. write cycles also internally latch addre sses and data needed for the programming and erase operations. reading data out of the device is similar to reading from other flash or eprom devices. output enable (/oe) and write enable (/we) can set the memory input and output. when from module is disab le condition the module is becoming power standby mode, system designer can get low - power design. all module components may be powered from a single +3.0v dc power supply. fe atures w access time : 90 , 100 and 120ns w high - density 16 mbyte design w high - reliability, low - power design w single + 3v 0.3v power supply w easy memory expansion w hardware reset pin(reset#) w fr4 - pcb design w low profile 72 - pin s od imm w minimum 100, 000 write/erase cycle w flexible sector architecture w embedded algorithms w erase suspend / erase resume options marking w timing 9 0ns access - 9 0 100ns access - 10 0 120ns access - 120 w packages 72 - pin s od imm b pin symbol pin symbol pin symbol 1 vss 25 dq22 49 dq8 2 dq0 26 dq 7 50 dq24 3 dq 16 27 dq 23 51 dq9 4 dq1 28 a7 52 dq25 5 dq17 29 a12 53 dq10 6 dq2 30 vcc 54 dq26 7 dq18 31 a8 55 dq11 8 dq3 32 a9 56 dq27 9 dq19 33 /we 3 57 dq12 10 vcc 34 /we2 58 dq28 11 a10 35 a13 59 vcc 12 a0 36 a14 60 dq29 13 a1 37 a15 61 dq13 14 a2 38 a16 6 2 dq30 15 a3 39 vss 63 dq14 16 a4 40 /ce0 64 dq31 17 a5 41 /ce2 65 dq15 18 a6 42 /ce3 66 a19 19 a11 43 /ce1 67 vss(pd1) 20 dq 4 44 /we 0 68 vss(pd2) 21 dq20 45 /we1 69 vss(pd3) 22 dq5 46 a17 70 /reset 23 dq21 47 /oe 71 a2 0 24 dq6 48 a18 72 vss 72 - pin s od imm top view flash - rom module 16 mbyte ( 4 m x 32 - bit) ,72pin - sodimm, 3.3v part no. hmf 4 m32 b8vs
hanbit h m f 4 m32 b8 v s url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 2 functional block dia gram dq 0 - 31 a0 - 19 a 0 - 20 / c e /oe dq 0 - 7 / w e u1 a 0 - 20 / c e /oe dq 0 - 7 / w e u5 a 0 - 20 / c e /oe dq 8 - 15 / w e u 3 a 0 - 20 / c e /oe dq 16 - 23 / w e u 2 a 0 - 20 / c e /oe dq 24 - 31 / we u4 / we0 / c e 0 /oe a 0 - 20 / c e /oe dq 8 - 15 / w e u 7 a 0 - 20 / c e /oe dq 16 - 23 / w e u 6 a 0 - 20 / c e /oe dq 24 - 31 / w e u 8 / c e 1 /oe / w e 0 / we1 / we1 / w e 2 / w e 2 / we3 / w e 3 dq 0 - dq31 a 0 - a 20 dq32 a2 1
hanbit h m f 4 m32 b8 v s url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 3 truth table mode /oe /ce /we dq power standby x h x high - z standby not selected h l h high - z active read l l h q a ctive write or erase x l l d active note : x means don t care absolute maximum rat ings parameter symbol rating voltage on any pin relative to vss v in,out - 0.5v to +4.0v voltage on vcc supply relative to vss v cc - 0.5v to +4.0v power dissipatio n p d 8 w storage temperature t stg - 65 o c to +150 o c operating temperature t a - 40 o c to + 85 o c w stresses greater than those listed under " absolute maximum ratings" may cause permanent damage to the device. this is a stress rating only and functional o peration of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. recommended dc operating conditi ons parameter symbol min typ . max supply voltage v cc 2.7v 3.0v 3.6v ground v ss 0 0 0 input high voltage v ih 0.7xv cc - vcc+0.3v input low voltage v il - 0.5 - 0.8v dc characteristics ( cmos compatible ) paramete r description test c onditions min typ max unit i li input l eakage current v in =vss to vcc, vcc=vcc max - 1.0 + 1.0 ua i lit a9 , /reset input l eakage current vcc= vcc max ; a9 ,/reset =12.5v 35 ua i lo output leakage current v out = vss to vcc, vcc= vcc max - 1.0 + 1.0 ua
hanbit h m f 4 m32 b8 v s url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 4 5mhz 16 i cc1 vc c active read current (note1) /ce=v i l , /oe=v i l all outputs open 1mhz 4 ma i cc2 vcc active write current (note 2 and 4) /ce=v il , /oe=v ih 30 ma i cc3 vcc standby current vcc=vcc max ; /ce,reset=vcc 0.3v 5 ua i cc4 vcc standby current du ring reset vcc=vcc max ; / reset=vcc 0.3v 5 ua i cc5 automatic sleep mode(note3) v ih =vcc 0.3v; v il =vss 0.3v 5 ua v il input low voltage - 0.5 0.8 v v ih input high voltage 0.7xvcc vcc+0.3 v v id voltage for autoselect and temporary unprotect vcc=3.3v 11.5 12.5 v v ol output low voltage i ol =4.0 ma, vcc=vcc min 0.4 v v oh1 i oh = - 2.0ma, vcc=vcc min 0.85xvcc v v oh2 output high voltage i oh = - 100ua, vcc= vcc min vcc - 0.4 v v lko low vcc lock - out voltage 1.5 v note s : 1. the icc current listed i ncludes both the dc operating current ane the frequency dependent component(at 5 mhz). the read current is typically 9ma (@vcc=3.0v. /oe at v 1h ) 2. icc active while embedded erase or embedded program is progress. 3. automatic sleep mode enables the low power mode when adder sses remain stable for t acc +30ns. typical sleep mode current is 200na. 4. not 100% tested. erase and programmin g performance parameter typ max unit comments block erase time 0.7 15 s ec chip erase time 27 s ec excl udes 00h programming prior to erasure byte programming time 9 270 us word programming time 11 3 3 0 us byte mode 18 54 s ec chip programming time word mode 12 36 s ec excludes system level overhead notes : 1. 25 o c, vcc = 3.0v, 100,000 cycles, typical pattern. 2 . system - level overhead is defined as the time required to excute the four - bus - cycle co mmand necessary to program each byte . in the preprogramming step of the internal erase routine, all bytes ar e programmed to 00h before erasure.
hanbit h m f 4 m32 b8 v s url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 5 capacitance parameter symbol parameter descrip tion test setup min max unit c in input capacitance v in = 0 v 10 pf c out output capacitance v out = 0 v 10 pf c in2 control pin capacitance v in = 0 v 10 pf notes : 1. sampled, not 100% tested 2. test conditions t a = 25 o c, f=1.0 mhz , vcc=3.3v . test specifications test condition value unit output load 1ttl gate and c l =100pf input rise and full times 5 ns input pulse lev els 0.0 - 3.0 v input timing measurement reference levels 1.5 v output timing measurement reference levels 1.5 v 3.0v device under test 2.7k w diodes = in3064 or equiva lent 6.2k w in3064 or equivalent c l note : c l = 100pf including jig capacitance
hanbit h m f 4 m32 b8 v s url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 6 ac characteristics u erase / program operations parameter symbols c l =100 pf - 90 - 100 - 120 jedec standard description min max min max min max unit t avav t wc write cycle time 90 10 0 120 ns t avwl t as address setup time 0 0 0 ns t wlax t ah address hold time 45 45 50 ns t dvwh t ds data setup time 45 45 50 ns t whdx t dh data hold time 0 0 0 ns t oes output enable setup time 0 0 0 ns t ghwl t ghwl read recover time before write 0 0 0 ns t elwl t cs /ce setup time 0 0 0 ns t wheh t ch /ce hold time 0 0 0 ns t wlwh t wp write pulse width 45 45 50 ns t whwl t wph write pulse width hi gh 30 30 30 ns t whwh1 t whwh1 byte programming operation 9 9 9 m s t whwh2 t bers block erase operation 0.7 0.7 0.7 sec t vcs vcc setup time 50 50 50 m s t rb recovery time from ry/by 0 0 0 ns t busy program/erase valid to ry/by delay 9 0 90 90 ns note: 1. not 100% tested. 2. see the "erase and programming performance" section for more information u alternate /ce controlled erase/ program operations c l =100pf parameter symbols - 90 - 100 - 120 jedec standard description min max min max min max unit t avav t wc write cycle time 90 100 120 ns t avel t as address setup time 0 0 0 ns t elax t ah address hold time 45 45 50 ns t dveh t ds data setup time 45 45 50 ns t ehdx t dh data hold time 0 0 0 ns t oes output enable setup time 0 0 0 ns t ghel t ghel read recover time before write 0 0 0 ns t wlel t ws /oe high to /we low 0 0 0 ns t ehwh t wh /we hold time 0 0 0 ns
hanbit h m f 4 m32 b8 v s url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 7 t eleh t cp /ce pulse width 45 45 50 ns t ehel t cph /ce pulse width high 30 30 30 ns t busy program/erase valid ry//by delay 90 90 90 n s t rb recovery time from ry//by 0 0 0 n s note: 1. not 100% tested. 2. see the "erase and programming performance" section for more information .
hanbit h m f 4 m32 b8 v s url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 8 u read operations timing u reset timing u program operations timing
hanbit h m f 4 m32 b8 v s url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 9 u chip/sector erase operation timings u data# polling times(during embedded algorithms)
hanbit h m f 4 m32 b8 v s url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 10 u toggle# bit timings (during embedded algorithms) u sector protect unprotect timeing diagram
hanbit h m f 4 m32 b8 v s url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 11 u alternate ce# controlled write operating timings
hanbit h m f 4 m32 b8 v s url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 12 package dimensions o r dering information part number density org. package component number vcc speed hmf4m32b8vs - 90 16mbyte x 32 72 pin - sodimm 8ea 3.3v 90ns hmf4m32b8vs - 100 16mbyte x 32 72 pin - sodimm 8ea 3.3v 100ns hmf4m32b8vs - 120 16mbyte x 32 72 pin - sodimm 8ea 3.3v 120ns 0.25 mm max min 2.5 5 mm 0 . 8 mm (solder & gold plating) 0.60 0.05 mm 1.0 0.1mm 3 . 2 mm max

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